ELECTROCOM’s remarkable record spans 200 research journal publications and numerous large research and development grants from government agencies and private enterprises. The work of our scientists has led to the successful approval of 11 US patents.

ELECTROCOM’s past projects have been in the areas of double heterojunction bipolar transistors, triple heterojunction bipolar transistors, high-gain Si/SiGe MIS heterojunction bipolar transistors, Si/SiGe/Si NPN heterojunction bipolar transistors, quantum collector bipolar transistors, and high performance BJT, MOSFET, JFET, MISFET, MESFET, and MODFET devices. Our past activities also include the development of methodologies for thin film epitaxial growth of III-V conventional (GaAs, InP, AlAs, InGaAs, etc.) and III-V wide band gap nitrides (GaN, AlN, InN, InGaN, InAlN, and AlGaN).